Topic description
Project Goals: The primary objective is to characterize the material crystallography and local strain within devices and interconnects to enable direct correlation between materials structure and chemistry and device characteristics.The student will deploy modern 4D STEM methods for characterizing strain.
Key responsibilities & Research Activities:
Method Development: Developing next-generation 4D-STEM workflows, including multi-slice electron ptychography, and integrating them with smart scanning strategies. Advanced Characterization: Use STEM - PED techniques for local strain in devices and crystallography of interconnects and compare with existing methods. Correlative Microscopy: Correlate TEM structural data with spectroscopic measurements (electron energy loss spectroscopy, energy dispersive X-ray spectroscopy), quantitative chemical measurements (atom probe tomography) and electrical data.